Title :
Dual band power amplifier for handset application
Author :
Jie Jin;Xuguang Zhang;Xiaoxiao Jiang;Yiyuan Fang
Author_Institution :
Shanghai University of Engineering Science, Shanghai 201620, China
Abstract :
The paper makes use of the wideband design technique and linear bias circuit to design a dual band power amplifier(PA) for TD-SCDMA. The PA is taped out in the 2μm InGaP/GaAs HBT process and verified in the evaluation board by the QPSK modulated stimulus with a chip rate of 1.28Mcps in 2.0 GHz. The measured result shows that the power gain, linear output power and power added efficiency are respectively 27dB, 28dBm and 39% with the adjacent channel power ratio of -33.08dBc in offset ± 1.6MHz.
Keywords :
"Power amplifiers","Time division synchronous code division multiple access","Wideband","Heterojunction bipolar transistors","Power generation","Impedance matching","CMOS integrated circuits"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517084
