Title :
A new intrinsic parameter extraction approach for small-signal model of AlGaN/GaN devices
Author :
Linghan Zhang;Yunzhou Wang;Yicong Liu;Xusheng Tang
Author_Institution :
School of Information Science and Engineering, Southeast University, Nanjing 211100, China
Abstract :
In this paper, a new intrinsic parameter extraction approach for small-signal model of AlGaN/GaN device is presented. This approach applies approximation and iteration to extract intrinsic parameters. This improved approach is reliable and accurate, and the simulation of the determined small-signal equitable circuit fits the measurement perfectly up to 40 GHz.
Keywords :
"Mathematical model","Integrated circuit modeling","Parameter extraction","HEMTs","Aluminum gallium nitride","Wide band gap semiconductors","Fitting"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517150
