DocumentCode :
3781348
Title :
Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes
Author :
Chengsen Wang;Hao Yuan;Qingwen Song;Xiaoyan Tang;Renxu Jia;Yuming Zhang;Yimen Zhang;Yidong Shen
Author_Institution :
JieJie Microelectronics, Jiangsu 226200, China
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
A 4H-SiC Junction Barrier Schottky Diodes(JBSs) based on 30μm, 3×1015 cm-3 epitaxial structures was fabricated by using metal Ti as the Schottky metal. The Non-linearly limit field rings (NL-FLRs) is used as termination for protecting the anode edge. The fabricated device shows a breakdown voltage of 3.1kV at reverse leakage current of 200uA and the forward current of 11A at the voltage drop of 3 V, corresponding to a current density of 275A/cm2, of which the on-resistance is 7.3 mΩ·cm2. Finally, the 5266 MW/cm2 BFOM value of fabricated SiC JBSs is achieved. The results show our fabricated SiC JBSs has an excellent performance.
Keywords :
"Silicon carbide","Schottky diodes","Performance evaluation","Current measurement","Breakdown voltage","Fabrication"
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
Type :
conf
DOI :
10.1109/ASICON.2015.7517153
Filename :
7517153
Link To Document :
بازگشت