• DocumentCode
    3781348
  • Title

    Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes

  • Author

    Chengsen Wang;Hao Yuan;Qingwen Song;Xiaoyan Tang;Renxu Jia;Yuming Zhang;Yimen Zhang;Yidong Shen

  • Author_Institution
    JieJie Microelectronics, Jiangsu 226200, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A 4H-SiC Junction Barrier Schottky Diodes(JBSs) based on 30μm, 3×1015 cm-3 epitaxial structures was fabricated by using metal Ti as the Schottky metal. The Non-linearly limit field rings (NL-FLRs) is used as termination for protecting the anode edge. The fabricated device shows a breakdown voltage of 3.1kV at reverse leakage current of 200uA and the forward current of 11A at the voltage drop of 3 V, corresponding to a current density of 275A/cm2, of which the on-resistance is 7.3 mΩ·cm2. Finally, the 5266 MW/cm2 BFOM value of fabricated SiC JBSs is achieved. The results show our fabricated SiC JBSs has an excellent performance.
  • Keywords
    "Silicon carbide","Schottky diodes","Performance evaluation","Current measurement","Breakdown voltage","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7517153
  • Filename
    7517153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3781348