Title :
Design consideration of uni-traveling carrier photodiode: Influence of doping profile and buffer layer
Author :
Yang Li;Hang Zhou;Pengfei Xu;Yujie Chen;Yanfeng Zhang;Siyuan Yu
Author_Institution :
The School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
Abstract :
Device modeling of InGaAs-InP-based uni-traveling carrier photodiode (UTC-PD) were performed in order to reveal the key parameters which affect the high speed performance of UTC-PD. Our simulations got 3dB bandwidth of 12.66GHz without interface effects and 3.59GHz with interface effects, respectively. On the other hand, step doping profile got a 3dB bandwidth of 21.4GHz, which is about 1.8 times larger than that of uniform doping. These indicate that both doping profile in the absorption layer and the defect at the interfacial buffer layer have remarkable influence on the performance of UTC-PD.
Keywords :
"Bandwidth","Absorption","Doping profiles","Buffer layers","Indium gallium arsenide","Semiconductor process modeling","Photodiodes"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517156
