DocumentCode
3781358
Title
A simple semi-analytical parameter extraction method for 40nm gatelength MOSFET
Author
Panpan Yu;Ying Zhou;Ling Sun;Jianjun Gao
Author_Institution
School of Information Science and Technology, East China Normal University, Shanghai 200062, China
fYear
2015
Firstpage
1
Lastpage
4
Abstract
A simple and accurate small-signal model for 40 nm gatelength MOSFET device is proposed in this paper. Semi-analytical extraction method is performed by S-parameter analysis based on the proposed equivalent circuit of MOSFET for high-frequency operation. Simulated and measured results of 40 nm MOSFET with a 5×0.04×4 μm gatewidth (unit gate width × unit gate length × number of gate finger) are compared and good agreement has been obtained up to 40GHz.
Keywords
"Semiconductor device modeling","MOSFET","Integrated circuit modeling","Logic gates","Equivalent circuits","Scattering parameters","Frequency measurement"
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN
978-1-4799-8483-1
Electronic_ISBN
2162-755X
Type
conf
DOI
10.1109/ASICON.2015.7517165
Filename
7517165
Link To Document