Title :
A simple semi-analytical parameter extraction method for 40nm gatelength MOSFET
Author :
Panpan Yu;Ying Zhou;Ling Sun;Jianjun Gao
Author_Institution :
School of Information Science and Technology, East China Normal University, Shanghai 200062, China
Abstract :
A simple and accurate small-signal model for 40 nm gatelength MOSFET device is proposed in this paper. Semi-analytical extraction method is performed by S-parameter analysis based on the proposed equivalent circuit of MOSFET for high-frequency operation. Simulated and measured results of 40 nm MOSFET with a 5×0.04×4 μm gatewidth (unit gate width × unit gate length × number of gate finger) are compared and good agreement has been obtained up to 40GHz.
Keywords :
"Semiconductor device modeling","MOSFET","Integrated circuit modeling","Logic gates","Equivalent circuits","Scattering parameters","Frequency measurement"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517165
