Title :
An enhanced decoder for multiple-bit error correcting BCH codes
Author :
Hupo Wei;Xiaole Cui;Qiang Zhang;Yufeng Jin
Author_Institution :
Key Lab of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055, China
Abstract :
With the advancement of device technology and decreasing the gap of memory cells, radiation particles may upset more multiple adjacent memory cells, and conventionally used BCH code in SRAM needs an improvement to correct the multiple bit soft errors. This paper proposes a novel high-speed BCH decoder that corrects triple-adjacent, double-adjacent and single-bit errors in parallel and serially corrects multiple-bit errors other than adjacent errors, the syndrome computation depend on the number of errors. The decoder has been implemented with a 130nm CMOS technology, and experimental results show that the proposed decoder incurs almost the same power and area overhead as compared to the conventional TEC BCH code serial decoder which corrects any double-bit errors in serial. What is more, the delay overheads incurred by the proposed parallel decoder is 50% lower than the serial decoder.
Keywords :
"Decoding","Generators","Delays","Random access memory","Error correction codes","Computational complexity","Parity check codes"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517203