Title :
Direct parameter extraction techniques for a new poly-Si TFT model
Author :
B. Iniguez;Z. Xu;T. Fjeldly;M.S. Shur
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We describe direct extraction techniques for the most important parameters of a new physics-based polysilicon (poly-Si) TFT model, suitable for circuit simulation. The physics-based model covers all operating regimes using continuous functions, includes short-channel effects and has been validated for devices of channel lengths down to 2 /spl mu/m. In spite of a small parameter set, the model includes the necessary dependencies on channel length.
Keywords :
"Parameter extraction","Thin film transistors","Threshold voltage","Integrated circuit modeling","Equations","Grain boundaries","Systems engineering and theory","Laboratories","Circuit simulation","Application specific integrated circuits"
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766247
