Low-capacitance laser heterostructure selectively buried in SI-InAlAs by AP-MOVPE

Author

Bouchoule, S. ; Decobert, J. ; Grosmaire, S. ; Leclerc, D. ; Kazmierski, C.

Author_Institution

Lab. for Photonics & Nanostuctures, CNRS, Bagneux, France

Volume

2

fYear

2001

fDate

2001

Firstpage

120

Abstract

A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers, showing a reduction of the structure capacitance with no degradation of the threshold current nor of the external efficiency.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; capacitance; indium compounds; quantum well lasers; vapour phase epitaxial growth; AP-MOVPE; InAlAs; active mesa stripe; capacitance reduction; external efficiency; high-speed optical sources; low-capacitance BH laser structure; selective regrowth; selectively buried heterostructure; semi-insulating InAlAs; strained QW active layer; threshold current; Capacitance measurement; Conductivity; Degradation; Diodes; High speed optical techniques; Indium compounds; Indium phosphide; Measurement standards; Robustness; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2001. ECOC '01. 27th European Conference on

Print_ISBN

0-7803-6705-7

Type

conf

DOI

10.1109/ECOC.2001.988846

Filename

988846