Title :
High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications
Author :
Menna, R. ; Komissarov, A. ; Maiorov, M. ; Khalfin, V. ; Tsekoun, A. ; Todorov, S. ; Connolly, J. ; Garbuzov, D.
Author_Institution :
Princeton Lightwave Inc., Cranbury, NJ, USA
Abstract :
High power 1310 nm InGaAsP/InP Fabry-Perot and single-frequency distributed-feedback (DFB) lasers with record output powers are reported. DFB chip power levels of 450 mW and ex-fiber power of 315 mW have been achieved for CW operation at 20°C.
Keywords :
Fabry-Perot resonators; III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; optical communication equipment; quantum well lasers; 1310 nm; 20 degC; 315 mW; 450 mW; CW output power; DFB chip power levels; Fabry-Perot lasers; InGaAsP-InP; InGaAsP/InP lasers; ex-fiber power; high power; multiple quantum well; single longitudinal mode; single spatial mode; single-frequency distributed-feedback lasers; telecommunication applications; Chemical lasers; Etching; Fabry-Perot; Gratings; Indium phosphide; Laser modes; Power lasers; Pump lasers; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.988850
