Title :
Particle detector grade semi-insulating GaAs: deep-level states studied by admittance transient spectroscopy
Author :
J. Darmo;F. Dubecky
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
Deep-level states in semi-insulating GaAs are analyzed from the viewpoint of their possible impact on the detection performance of particle detectors prepared from such material. Presence of deep-level states observed was correlated with the detection spectra of 122 keV photons.
Keywords :
"Radiation detectors","Gallium arsenide","Admittance","Spectroscopy","Capacitance measurement","Electrical resistance measurement","Gas detectors","Current measurement","Space charge","Charge measurement"
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785081
