Title :
The influence of SI-GaAs crystal property on device characteristic
Author :
Xiukun He; Qiongna Ru; Li Ding
Author_Institution :
Tianjing Electron. Mater. Res. Inst., China
Abstract :
In this paper we have investigated the characteristics of undoped SI-GaAs crystals and carried out related experiments concerning device processes. We have analyzed the relationship between the material and device properties and studied the effect of the various parameters and their distribution in the SI-GaAs crystal on the device characteristics.
Keywords :
"Crystalline materials","Position measurement","FETs","Gallium arsenide","Power measurement","Conductivity","Frequency measurement","Fabrication","Manufacturing","Density measurement"
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785981
