DocumentCode :
3782526
Title :
MESFET noise modeling based on noise wave temperatures
Author :
O. Pronic;V. Markovic;N. Males-Ilic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Volume :
2
fYear :
1999
Firstpage :
407
Abstract :
A simple procedure for the extraction of intrinsic noise wave temperatures in the wave representations of microwave transistors is presented in this paper. A set of equations describing the noise parameters as a function of three equivalent noise temperatures is implemented within the circuit simulator Libra. After that, the wave noise model is defined as a new user-defined element of the Libra program library. Good agreement between modeled and measured noise parameters is observed.
Keywords :
"MESFETs","Temperature","Circuit noise","Scattering parameters","Microwave transistors","Circuit simulation","Libraries","Optimized production technology","Noise figure","Equations"
Publisher :
ieee
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Services, 1999. 4th International Conference on
Print_ISBN :
0-7803-5768-X
Type :
conf
DOI :
10.1109/TELSKS.1999.806241
Filename :
806241
Link To Document :
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