• DocumentCode
    3782593
  • Title

    A technique to avoid micropipe effects on 6H-SiC power devices

  • Author

    M. Badila;G. Brezeanu;J.P. Chante;M.-L. Locatelli;J. Millan;P. Godignon;P. Lungu;F. Mitu;F. Draghici;F.J. Campos;A. Lebedev;V. Banu;G. Banoiu

  • Author_Institution
    IMT Bucharest, Romania
  • Volume
    1
  • fYear
    1999
  • Firstpage
    187
  • Abstract
    A cellular structure for 6H-SiC power devices is discussed. Using a matrix structure with 0.16 mm/sup 2/ cell area, a medium power (600 V breakdown voltage and 1 A at a forward voltage of 5 V) pn diode has been fabricated and tested. A technique to separate and connect the good cells has been used.
  • Keywords
    "Silicon carbide","Diodes","Substrates","Etching","Temperature","Thermal conductivity","Voltage","Electronic equipment testing","Fasteners","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS ´99 Proceedings. 1999 International
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810459
  • Filename
    810459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3782593