Title :
A technique to avoid micropipe effects on 6H-SiC power devices
Author :
M. Badila;G. Brezeanu;J.P. Chante;M.-L. Locatelli;J. Millan;P. Godignon;P. Lungu;F. Mitu;F. Draghici;F.J. Campos;A. Lebedev;V. Banu;G. Banoiu
Author_Institution :
IMT Bucharest, Romania
Abstract :
A cellular structure for 6H-SiC power devices is discussed. Using a matrix structure with 0.16 mm/sup 2/ cell area, a medium power (600 V breakdown voltage and 1 A at a forward voltage of 5 V) pn diode has been fabricated and tested. A technique to separate and connect the good cells has been used.
Keywords :
"Silicon carbide","Diodes","Substrates","Etching","Temperature","Thermal conductivity","Voltage","Electronic equipment testing","Fasteners","Fabrication"
Conference_Titel :
Semiconductor Conference, 1999. CAS ´99 Proceedings. 1999 International
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810459
