Title :
Mesh structure adjustment in 2D simulation of VLSI super self-aligned Si bipolar transistor
Author :
T. Suligoj;P. Biljanovic
Author_Institution :
Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
Abstract :
The fabrication process of a high-speed, deep-trench, double polysilicon super-self-aligned silicon bipolar transistor is simulated by a 2D simulation program, assuming 0.25 /spl mu/m design rules. The effect of the simulation mesh on the doping profiles of intrinsic and extrinsic transistor, deposited layers and electrical characteristics are analyzed.
Keywords :
"Very large scale integration","Bipolar transistors","Computational modeling","Doping profiles","Fabrication","Etching","Electric variables","Semiconductor process modeling","Resists","Analytical models"
Conference_Titel :
Africon, 1999 IEEE
Print_ISBN :
0-7803-5546-6
DOI :
10.1109/AFRCON.1999.821944
