DocumentCode :
3782801
Title :
One application of SOI memory cell-memory array
Author :
B. Loncar;Z. Stanojevic;D. Novakovic;D.E. Ioannou;P. Osmokrovic
Author_Institution :
Fac. of Technol. & Metall., Belgrade Univ., Serbia
Volume :
2
fYear :
2000
Firstpage :
455
Abstract :
A way of designing a flash memory array is illustrated. We explain the general principles of operation of a SOI flash memory cell which uses the standard way to write information and a novel method to erase information. Performances obtained by this analysis are applied to a simple memory array. An example of a layout design of 16/spl times/16 memory chip is included.
Keywords :
"Silicon on insulator technology","Insulation","Voltage control","Threshold voltage","Silicon compounds","Parasitic capacitance","EPROM","Tunneling","Hot carrier injection","Petroleum"
Publisher :
ieee
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Print_ISBN :
0-7803-5235-1
Type :
conf
DOI :
10.1109/ICMEL.2000.838731
Filename :
838731
Link To Document :
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