Title :
Multi rate timing extraction using optical injection locking of a self oscillating InGaAs/InP heterojunction bipolar photo-transistor
Author :
Lasri, J. ; Dahan, D. ; Eisenstein, G. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
We demonstrate direct optical injection locking in a self oscillating InGaAs/InP heterojunction bipolar photo-transistor for timing extraction at multiple bit rates. One oscillator is used for 10 to 40 Gbit/s signals.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; injection locked oscillators; optical communication equipment; phototransistors; synchronisation; 10 to 40 Gbit/s; InGaAs-InP; multi rate timing extraction; optical injection locking; oscillator; self oscillating InGaAs/InP heterojunction bipolar photo-transistor; Indium gallium arsenide; Indium phosphide; Injection-locked oscillators; Nonlinear optics; Optical attenuators; Optical filters; Optical receivers; Optical transmitters; Stimulated emission; Timing;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.989083
