Title :
Influence of gate oxide charge density on VDMOS transistor ON-resistance
Author :
Z. Pavlovic;I. Manic;Z. Prijic;V. Davidovic;N. Stojadinovic
Author_Institution :
Fac. of Natural Sci., Pristina Univ., Yugoslavia
Abstract :
In this paper the influence of net density of gate oxide charge on low-voltage power VDMOS transistor ON-resistance is analyzed. By affecting the threshold voltage, flat-band voltage, and carrier mobilities in channel and accumulation layer regions, variations of gate oxide charge density affect the channel resistance, accumulation layer resistance, and the overall ON-resistance as well. The variation of gate oxide charge density from 10/sup 10/ cm/sup -2/ to 10/sup 11/ cm/sup -2/ causes the ON-resistance to increase for more than 20%.
Keywords :
"Epitaxial layers","Threshold voltage","MOSFETs","Geometry","Neck","Contact resistance","Semiconductor process modeling","Conductivity","Manufacturing processes","Ionizing radiation"
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838777
