DocumentCode :
3782839
Title :
General analytical solution to the minority carrier current density in low-high junctions
Author :
S. Ristic;I. Manic;Z. Prijic;A. Prijic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Volume :
1
fYear :
2000
Firstpage :
169
Abstract :
In this paper we present a derivation of the general equation for calculation of the minority carrier current density in silicon diode containing graded n-n+ junction. The derivation of equation applicable at all injection levels is carried out by accounting for the heavy doping effects. Applicability of derived general expression is evaluated in diode containing low-high junction with Gaussian-type impurity concentration profile.
Keywords :
"Current density","Semiconductor diodes","P-i-n diodes","Semiconductor impurities","Doping profiles","Charge carrier processes","Silicon","Electrons","Differential equations","Gaussian processes"
Publisher :
ieee
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Print_ISBN :
0-7803-5235-1
Type :
conf
DOI :
10.1109/ICMEL.2000.840547
Filename :
840547
Link To Document :
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