Title :
High efficiency 10 Gbps InP/InGaAs avalanche photodiodes with distributed Bragg reflector
Author :
Ishimura, E. ; Funaba, S. ; Tanaka, Y. ; Aoyagi, T. ; Nishimura, T. ; Omura, E.
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
InP/InGaAs-based avalanche photodiodes for 10 Gbps application have been developed. By adopting the distributed Bragg reflector, high efficiency of 0.88 A/W and large gain-bandwidth product of 100 GHz are successfully demonstrated.
Keywords :
Bragg gratings; III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; 10 Gbit/s; APD; InP-InGaAs; avalanche photodiodes; distributed Bragg reflector; gain-bandwidth product; high-sensitivity receivers; optical fiber communication; Avalanche photodiodes; Bandwidth; Distributed Bragg reflectors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical receivers; Reflectivity; Substrates; Wavelength measurement;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.989106
