Title :
Reliability study on unitraveling-carrier photodiode for a 40 Gbit/s optical transmission systems
Author :
Furuta, T. ; Fushimi, H. ; Yasui, T. ; Muramoto, Y. ; Kamioka, H. ; Mawatari, H. ; Fukano, H. ; Ishibashi, Takayuki ; Ito, H.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
The reliability of InP/InGaAs uni-traveling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25 C was obtained from long-term bias-temperature tests. Stable operations for over 2000 h were also confirmed under high optical input conditions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical receivers; photodiodes; semiconductor device reliability; 25 C; 40 Gbit/s; InP-InGaAs; failure rate; high optical input conditions; long-term bias-temperature tests; optical transmission systems; reliability; stable operation; uni-traveling-carrier photodiode; Aging; Dark current; Indium gallium arsenide; Indium phosphide; Optical films; Optical refraction; Photoconductivity; Photodiodes; Stimulated emission; Testing;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.989107
