DocumentCode
3783039
Title
An exhaustive method for characterizing the interconnect capacitance considering the floating dummy-fills by employing an efficient field solving algorithm
Author
Jin-Kyu Park; Keun-Ho Lee; Joo-Hee Lee; Young-Kwan Park; Jeong-Taek Kong
Author_Institution
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fYear
2000
Firstpage
98
Lastpage
101
Abstract
This paper presents an exhaustive method to characterize the interconnect capacitances while taking the floating dummy-fills into account. Results of the case study with typical floating dummy-fills show that the inter-layer capacitances are also an important factor in the electrical consideration for the dummy-fills. An efficient field solving algorithm is implemented into the 3D finite-difference solver and its computational efficiency is compared with the industry-standard RAPHAEL. Furthermore, the overall flow for extracting the parasitic capacitance considering the dummy-fills at the full-chip level is discussed and the underlying assumption is examined.
Keywords
"Parasitic capacitance","Delay","Crosstalk","Computer aided engineering","Finite difference methods","Computer industry","Testing","Dielectrics","Electric variables","Application specific integrated circuits"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871217
Filename
871217
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