Title :
An ultra high speed waveguide avalanche photodiode for 40-Gb/s optical receiver
Author :
Nakata, T. ; Takeuchi, T. ; Makita, K. ; Amamiya, Y. ; Suzuki, Y. ; Torikai, T.
Author_Institution :
Photonic & Wireless Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We have developed an ultra high speed InAlAs-WG-APD with a 30-GHz bandwidth. We fabricated well defined small mesa APDs using dry-etching to reduce the capacitance of the APD. By combining this WG-APD and a GaAs-based preamplifier, we achieved a 30-GHz bandwidth APD receiver at M=2. This front end shows the possibility of applying the APDs to 40-Gb/s optical receivers for the first time.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical receivers; 30 GHz; 40 Gbit/s; APD receiver; GaAs-based preamplifier; InAlAs; capacitance reduction; dry-etching; optical communication systems; optical receiver; ultra high speed waveguide avalanche photodiode; well defined small mesa avalanche photodiode; Avalanche photodiodes; Bandwidth; Capacitance; Indium compounds; Optical materials; Optical receivers; Optical waveguides; Reproducibility of results; Substrates; Wet etching;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.989111
