Title :
Simulation of large-signal behavior of a GaAs low noise amplifier
Author :
A. Baric;Z. Butkovic
Author_Institution :
Fac. of Electr. Eng., Zagreb Univ., Croatia
Abstract :
This paper investigates the linearity of a GaAs MESFET amplifier. A two-stage low noise amplifier is analyzed by PSPICE. The large-signal S parameters are determined for different load conditions, i.e. a resistive load, an active self-biased load and a cascode configuration. Additionally, the linearity is described in terms of two-tone intermodulation products of the 3/sup rd/ and 5/sup th/ order, as well as the 3/sup rd/ order intercept point (IP/sub 3/).
Keywords :
"Gallium arsenide","Low-noise amplifiers","Scattering parameters","Linearity","Voltage","Circuits","SPICE","Frequency","Impedance","MESFETs"
Conference_Titel :
Electrotechnical Conference, 2000. MELECON 2000. 10th Mediterranean
Print_ISBN :
0-7803-6290-X
DOI :
10.1109/MELCON.2000.880400
