• DocumentCode
    3783170
  • Title

    Simulation of large-signal behavior of a GaAs low noise amplifier

  • Author

    A. Baric;Z. Butkovic

  • Author_Institution
    Fac. of Electr. Eng., Zagreb Univ., Croatia
  • Volume
    1
  • fYear
    2000
  • Firstpage
    193
  • Abstract
    This paper investigates the linearity of a GaAs MESFET amplifier. A two-stage low noise amplifier is analyzed by PSPICE. The large-signal S parameters are determined for different load conditions, i.e. a resistive load, an active self-biased load and a cascode configuration. Additionally, the linearity is described in terms of two-tone intermodulation products of the 3/sup rd/ and 5/sup th/ order, as well as the 3/sup rd/ order intercept point (IP/sub 3/).
  • Keywords
    "Gallium arsenide","Low-noise amplifiers","Scattering parameters","Linearity","Voltage","Circuits","SPICE","Frequency","Impedance","MESFETs"
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 2000. MELECON 2000. 10th Mediterranean
  • Print_ISBN
    0-7803-6290-X
  • Type

    conf

  • DOI
    10.1109/MELCON.2000.880400
  • Filename
    880400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783170