DocumentCode :
3783248
Title :
Photoenhanced wet etching of gallium nitride for gate recessing
Author :
J. Skriniarova;A. Fox;P. Bochem;P. Kordos
Author_Institution :
Institute of Thin Film and Ion Technology
fYear :
2000
Firstpage :
13
Lastpage :
16
Keywords :
"Wet etching","III-V semiconductor materials","Gallium nitride","Surface morphology","Rough surfaces","Surface roughness","MESFETs","Atomic force microscopy","Scanning electron microscopy","HEMTs"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889443
Filename :
889443
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3783248
