3783249

Gan-based electronics: material and device issues

P. Kordos

Institute of Thin Film and Ion Technology (ISI), Research Centre Julich

2000

47

54

"Gallium nitride","HEMTs","MODFETs","Aluminum gallium nitride","Frequency","Photonic band gap","Power generation","Schottky barriers","Wet etching","Optical materials"

ieee

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

0-7803-5939-9

conf

10.1109/ASDAM.2000.889450

889450