مرکز منطقه ای اطلاع رساني علوم و فناوري - Vertical silicon MOSFETs based on selective epitaxial growth

DocumentCode :

3783250

Title :

Vertical silicon MOSFETs based on selective epitaxial growth

Author :

J. Moers;A. Tonnesmann;D. Klaes;L. Vescan;A. van der Hart;A. Fox;M. Marso;P. Kordos;H. Luth

Author_Institution :

Institut fur Schicht- und lonentechnik

fYear :

2000

Firstpage :

Lastpage :

Keywords :

"Silicon","MOSFETs","Epitaxial growth","Lithography","Chemicals","Substrates","Annealing","Etching","Parasitic capacitance","Microelectronics"

Publisher :

ieee

Conference_Titel :

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Print_ISBN :

0-7803-5939-9

Type :

conf

DOI :

10.1109/ASDAM.2000.889454

Filename :

889454

Link To Document :