DocumentCode :
3783259
Title :
Optical determination of /spl delta/-doping concentration in semiconductor structures
Author :
A. Babinski;R. Kulawinski;T. Tomaszewicz;J.M. Baranowski
Author_Institution :
Inst. of Exp. Phys., Warsaw Univ., Poland
fYear :
2000
Firstpage :
183
Lastpage :
186
Abstract :
The electroreflectance measurements on modulation Si /spl delta/-doped pseudomorphic GaAs/InGaAs/GaAs quantum well at room temperature are presented. Previously proposed Electroreflectance Bias-Wavelength mapping is used for characterisation of investigated structure. The Fourier transform applied to Franz-Keldysh oscillations revealed the value of electric field in the structure. A difference between an electric field above and below the /spl delta/-doping plane was used to find the ionized dopant concentration. The position of the /spl delta/-layer was also obtained from our analysis.
Keywords :
"Gallium arsenide","Erbium","Optical modulation","Wavelength measurement","Semiconductor device doping","Voltage","Temperature","Fourier transforms","Gold","Physics"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889477
Filename :
889477
Link To Document :
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