Optical determination of /spl delta/-doping concentration in semiconductor structures

The electroreflectance measurements on modulation Si /spl delta/-doped pseudomorphic GaAs/InGaAs/GaAs quantum well at room temperature are presented. Previously proposed Electroreflectance Bias-Wavelength mapping is used for characterisation of investigated structure. The Fourier transform applied to Franz-Keldysh oscillations revealed the value of electric field in the structure. A difference between an electric field above and below the /spl delta/-doping plane was used to find the ionized dopant concentration. The position of the /spl delta/-layer was also obtained from our analysis.