DocumentCode :
3783265
Title :
Study of diamond films prepared by hot filament chemical vapor deposition
Author :
A. Kromka;V. Malcher;J. Janik;V. Dubravcova;A. Satka;I. Cerven
Author_Institution :
Dept. of Microelectron, Slovak Univ. of Technol., Bratislava, Slovakia
fYear :
2000
Firstpage :
299
Lastpage :
302
Abstract :
A systematic study of growth rate and quality of polycrystalline diamond films by synthesized by hybrid hot filament chemical vapor deposition (HF CVD) in dependence on growth conditions is carried out by Raman spectroscopy and X-ray diffraction measurements. Films grown at the substrate temperature of 600/spl deg/C show a good quality in sense of micro-Raman spectroscopy. The X-ray diffraction patterns revealed the change in preferential grain crystallographic orientation from [100] to [111] as a results of increased substrate temperature. The surface features of deposited films varied from rectangularto triangular-like structures. The growth rate increased form 0.42 to 0.58 /spl mu/m/h with increasing temperature form 600 to 900/spl deg/C for positively biased substrate. The growth rate is also dependent on substrate biasing. The influence of hybrid HFCVD method on possible lowering of activation energy down to 2.51 kcal/mol is presented.
Keywords :
"Chemical vapor deposition","Plasma temperature","X-ray diffraction","Diamond-like carbon","Plasma measurements","Scanning electron microscopy","X-ray scattering","Plasma chemistry","Plasma materials processing","DC generators"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889505
Filename :
889505
Link To Document :
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