Determination of implanted layer depth in silicon by electrochemical C-V technique

A method for determining the carrier concentration profile N(x) and the depth of p/sup +/-n junction boron implanted silicon using the electrochemicaI capacitance-voltage method, and EBIC (electron beam induced current) is presented. The above mentioned methods were found to be suitable for characterizing the implantation process. Experimental results have been compared with theoretical ones based on Gauss N/sub G/(x) and Pearson IV Np(X) distributions and with those obtained by means of EBIC.