DocumentCode
3783268
Title
Physical and structural characterization of NiO thin films for gas detection
Author
I. Hotovy;J. Huran;L. Spiess;P. Siciliano;R. Rella;V. Rehacek
Author_Institution
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
fYear
2000
Firstpage
331
Lastpage
334
Abstract
We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH/sub 3/ and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420/spl deg/C for sample prepared in oxide-sputtering mode.
Keywords
"Transistors","Sputtering","Semiconductor materials","Substrates","Conducting materials","Nickel","Temperature sensors","Microelectronics","Gas detectors","Chemical sensors"
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889513
Filename
889513
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