DocumentCode :
3783268
Title :
Physical and structural characterization of NiO thin films for gas detection
Author :
I. Hotovy;J. Huran;L. Spiess;P. Siciliano;R. Rella;V. Rehacek
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
fYear :
2000
Firstpage :
331
Lastpage :
334
Abstract :
We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH/sub 3/ and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420/spl deg/C for sample prepared in oxide-sputtering mode.
Keywords :
"Transistors","Sputtering","Semiconductor materials","Substrates","Conducting materials","Nickel","Temperature sensors","Microelectronics","Gas detectors","Chemical sensors"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889513
Filename :
889513
Link To Document :
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