• DocumentCode
    3783268
  • Title

    Physical and structural characterization of NiO thin films for gas detection

  • Author

    I. Hotovy;J. Huran;L. Spiess;P. Siciliano;R. Rella;V. Rehacek

  • Author_Institution
    Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
  • fYear
    2000
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH/sub 3/ and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420/spl deg/C for sample prepared in oxide-sputtering mode.
  • Keywords
    "Transistors","Sputtering","Semiconductor materials","Substrates","Conducting materials","Nickel","Temperature sensors","Microelectronics","Gas detectors","Chemical sensors"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889513
  • Filename
    889513