Quantum size InAs/GaAs lasers-preparation and properties

Semiconductor lasers based on quantum dots or very thin InAs strained quantum wells have been intensively studied during the last few years. The advantage of a zero-dimensional structure lies in its /spl square/-function density of states but this is devalued by the large fluctuation of the size and shape of quantum dots. However, the higher electroluminescence efficiency and higher working temperature remain. That is why the use of very thin strained quantum wells can be a reasonable compromise for the preparation of highly efficient lasers emitting near 1 /spl mu/m. In this paper, we report the preparation and parameters of laser structures based on very thin strained single and multiple quantum wells working at room and elevated temperatures. The WA characteristics, threshold current density and efficiency of these lasers were studied in the temperature range from 10 K to 370 K.