• DocumentCode
    3783280
  • Title

    Deep level transient spectroscopy characterization of porous GaP layers

  • Author

    M. Calin

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova
  • Volume
    1
  • fYear
    2000
  • Firstpage
    135
  • Abstract
    Deep Level Transient Spectroscopy (DLTS) spectra of Schottky diodes on both [100] and [111] GaP substrates were measured. The parameters of one hole and three electron traps were determined. The set of the charge carrier traps was found to depend upon the orientation of the substrate. These traps are suggested to be formed during the high-energy ion implantation and electrochemical processing.
  • Keywords
    "Spectroscopy","Electron traps","Dark current","Temperature dependence","Schottky diodes","Etching","Crystals","Charge carrier processes","Thermal conductivity","Physics"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890204
  • Filename
    890204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783280