Title :
A wave approach to signal and noise modeling of dual-gate MESFET
Author :
O. Pronic;V. Markovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Yugoslavia
Abstract :
A new procedure for signal and noise modeling of dual-gate MESFET is described. The small-signal model is based on two cascaded single-gate MESFET intrinsic equivalent circuits embedded in a network representing device parasitics. Wave interpretation of noise is used for defining the noise parameters of each single gate MESFET. On the basis of that, a CAD-oriented procedure is developed for extracting dual-gate MESFET model parameters as well as noise wave temperatures. Modeled S and noise parameter characteristics are compared to measured ones and quite good agreement is observed.
Keywords :
"Circuit noise","MESFET circuits","Temperature","Equivalent circuits","Scattering parameters","Noise figure","Frequency","Microwave circuits","Noise measurement","Power amplifiers"
Conference_Titel :
Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on
Print_ISBN :
83-906662-3-5
DOI :
10.1109/MIKON.2000.913926
