Title :
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: present status and prospects
Author :
F. Dubecky;J. Darmo;B. Zat´ko;R. Fornari;V. Necas;M. Krempasky;P.G. Pelfer;M. Sekacova;P. Bohacek
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
In this work, the different aspects of X-ray digital radiology are considered and the requirements of the materials for radiation detector applications are identified. The status of development of X- and /spl gamma/-ray detectors based on semi-insulating (SI) GaAs and InP is reviewed. Emphasis is put on the (i) basic material characteristics, (ii) role of the electrodes in the overall detector performances. Detectors recently developed at IEE SAS are illustrated along with the first digital images taken with the detectors. Some conclusions about the relationship between material quality and applications are provided.
Keywords :
"Gallium arsenide","Indium phosphide","Radiation detectors","Attenuation","Semiconductor materials","Radiology","Digital images","Costs","Electrodes","Synthetic aperture sonar"
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939217
