DocumentCode :
3783735
Title :
Radiation detector based on bulk semi-insulating GaAs: Role of detector geometry and electrode technology
Author :
F. Dubecky;B. Znt´ko;J. Darmo;M. Krempasky;M. Sekacova;V. Necas;R. Senderak;A. Foster;P. Kordos
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
fYear :
2000
Firstpage :
187
Lastpage :
190
Abstract :
The performance of radiation detectors which are based on semi-insulating GaAs with the PC blocking electrode prepared by MBE, as well as the Schottky electrode is presented. The role of the detector geometry including base thickness and area of the blocking contact is studied. The influence of the back electrode technology and detector operation temperature is also illustrated.
Keywords :
"Radiation detectors","Gallium arsenide","Geometry","Electrodes","Temperature","Fabrication","Back","Spectroscopy","Schottky barriers","Metallization"
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Print_ISBN :
0-7803-5814-7
Type :
conf
DOI :
10.1109/SIM.2000.939224
Filename :
939224
Link To Document :
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