DocumentCode :
3783736
Title :
The effect of electric field on the self-organized quantum dots
Author :
A. Babinski;K.P. Korona;J.M. Baranowski
Author_Institution :
Inst. of Experimental Phys., Warsaw Univ., Poland
fYear :
2000
Firstpage :
232
Lastpage :
235
Abstract :
The effect of electric field on the photoluminescence (PL) from quantum dots (QDs) is investigated in this work. The results of PL measurements from self-organized QDs InGaAs/GaAs embedded in a field-effect structure are presented. The lineshape changes, which accompany the QDs quenching are discussed in terms of thermal evaporation and tunneling of carriers out of the QDs. The results of time-resolved PL in the biased structure are also presented and discussed.
Keywords :
"Quantum dots","US Department of Transportation","Gallium arsenide","Capacitance","Photoluminescence","Atomic force microscopy","Laser mode locking","Laser excitation","Temperature","Tunneling"
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Print_ISBN :
0-7803-5814-7
Type :
conf
DOI :
10.1109/SIM.2000.939233
Filename :
939233
Link To Document :
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