Quantum-dot microlasers as high-speed light sources for monolithic integration

Author

Rennon, S. ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

1

fYear

2001

fDate

2001

Firstpage

26

Abstract

Short cavity lasers based on deeply etched Bragg-mirrors were fabricated on GaInAs/AlGaAs lasers structures with self-organised GaInAs quantum-dots as active layers. CW operation at room temperature was obtained for lasers with cavity lengths down to 12 μm. The microlasers exhibit good modulation properties and can be operated at high temperatures.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; laser mirrors; microcavity lasers; optical fabrication; optical modulation; quantum well lasers; self-assembly; semiconductor quantum dots; 12 micron; CW operation; GaInAs-AlGaAs; GaInAs/AlGaAs lasers structures; active layers; cavity lengths; deeply etched Bragg-mirrors; high temperatures; high-speed light sources; modulation properties; monolithic integration; quantum-dot microlasers; room temperature; self-organised GaInAs quantum-dots; short cavity lasers; Electron beams; Etching; Light sources; Lithography; Mirrors; Monolithic integrated circuits; Quantum dot lasers; Quantum dots; Quantum well lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2001. ECOC '01. 27th European Conference on

Print_ISBN

0-7803-6705-7

Type

conf

DOI

10.1109/ECOC.2001.989415

Filename

989415