Title :
Development of novel photodiodes as a photon counter
Author :
T. Miyachi;T. Edamura;S. Furuta;N. Hasebe;M. Higuchi;M. Ishiwata;H. Kan;R. Kikuchi;T. Masumura;T. Matsuyama;A. Misaki;I. Nakamura;T. Sugawara;T. Tazawa;C. Tezuka
Author_Institution :
Center for Nucl. Study, Tokyo Univ., Japan
Abstract :
Superlattice type photodiodes of a GaAs-Al/sub x/Ga/sub 1-x/As structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode with a 10 nm well and a 15 nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiode was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 10/sup 18/ cm/sup -3/ at room temperature on the multiplication rate is discussed.
Keywords :
"Photodiodes","Counting circuits","Semiconductor diodes","Detectors","Ocean temperature","Physics","Gallium arsenide","Photoconductivity","Dark current","Voltage"
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Print_ISBN :
0-7803-6503-8
DOI :
10.1109/NSSMIC.2000.949262
