Title :
Gamma-irradiation effects in power MOSFETs for application in communication satellites
Author :
N. Stojadinovic;S. Djoric-Veljkovic;V. Davidovic;I. Manic;S. Golubovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
fDate :
6/23/1905 12:00:00 AM
Abstract :
The effects of pre-irradiation elevated-temperature bias stressing on the radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed, and more considerable mobility reduction in unstressed devices have been observed. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.
Keywords :
"MOSFETs","Artificial satellites","Stress","Power supplies","Threshold voltage","Power system reliability","Life testing","Frequency","Orbits","Communication switching"
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2001. TELSIKS 2001. 5th International Conference on
Print_ISBN :
0-7803-7228-X
DOI :
10.1109/TELSKS.2001.955805
