DocumentCode :
3783955
Title :
Neural models of microwave transistor noise parameters based on bias conditions and S-parameters
Author :
V. Markovic;Z. Marinkovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Volume :
2
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
683
Abstract :
This paper presents the results of neural networks application in microwave transistor noise modeling. The neural networks are used to model noise parameters dependence on bias conditions and frequency. In order to improve the modeling, S-parameters are included as inputs of neural models. Once trained, the developed model can be used to predict noise parameters without additional knowledge about noise parameters or any additional computational effort.
Keywords :
"Microwave transistors","Scattering parameters","Neural networks","Frequency","Circuit noise","Impedance measurement","Noise measurement","Multi-layer neural network","Neurons","Microwave devices"
Publisher :
ieee
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2001. TELSIKS 2001. 5th International Conference on
Print_ISBN :
0-7803-7228-X
Type :
conf
DOI :
10.1109/TELSKS.2001.955864
Filename :
955864
Link To Document :
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