Title :
Electrical and optical characterization of planar MSM structures including /spl delta/-doped GaAs layers
Author :
J. Kovac;A. Vincze;J. Chovan;D. Hasko;P. Gurnik;N. Klasovity;B. Sciana;M. Tlaczala;D. Radiewicz;I. Zboirowska-Lindert
Author_Institution :
Microelectron. Dept, Slovak Univ. of Technol., Bratislava, Slovakia
fDate :
6/23/1905 12:00:00 AM
Abstract :
In this work the influence of one and two (Si) /spl delta/-doped GaAs layers on the electrical and optical properties of MSM photodetectors has been studied. The sheet concentration and position of /spl delta/-doped layers in the structure were confirmed from C-V and Hall measurements. The properties of TiPtAu and TiPdAu Schottky contacts of MSM structures were analyzed and for interdigited MSM structures lateral measurements of dark and photocurrent current I-V characteristics were investigated. In the spectral characteristics of /spl delta/-doped layers, the presence of Franz-Keldysh oscillation are observable. The high speed measurements revealed that /spl delta/-doped layers effect the trapping of generated carriers and give rise to a decrease in the speed of /spl delta/-doped GaAs MSM photodetectors.
Keywords :
"Gallium arsenide","Photodetectors","Schottky barriers","Capacitance-voltage characteristics","High speed optical techniques","Epitaxial growth","Epitaxial layers","Photoconductivity","Optical receivers","Position measurement"
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974286
