Title :
Fault modeling of physical failures in CMOS VLSI circuits
Author :
M.E. Zaghloul;D. Gobovic
Author_Institution :
George Washington Univ., Washington, DC, USA
Abstract :
The analog complex physical fault of a gate-to-drain short in VLSI CMOS circuits is studied. A relationship between the inverse voltage of an inverter and the faulty voltage output is obtained and is then used to study the propagation of the faulty signal through successive gates. General graphical rules are developed which describe techniques for obtaining the operating point of the circuit through table look-up procedures. The technique is simple and can easily be added to known fault-simulation algorithms.
Keywords :
"Circuit faults","Semiconductor device modeling","Very large scale integration","Voltage","Circuit simulation","Inverters","CMOS analog integrated circuits","MOS devices","Switches","Logic"
Journal_Title :
IEEE Transactions on Circuits and Systems