• DocumentCode
    378449
  • Title

    Low-drive-voltage 40 Gb/s modulator on X-cut LiNbO3 wafer

  • Author

    Kondo, Jungo ; Kondo, Atsuo ; Aoki, Kenji ; Takatsuji, Saori ; Mitomi, Osamu ; Imaeda, Minoru ; Kozuka, Yoshinari ; Minakata, Makoto

  • Author_Institution
    NGK INSULATORS, LTD., Aichi, Japan
  • Volume
    3
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    334
  • Abstract
    A 40 Gb/s X-cut LiNbO3 modulator based on a two-step back-slot structure provides low drive voltage of 2.8 V. No DC drift phenomena are observed during more than 100 hours of operation at 100 degree C. These performances indicate high potential for 40 Gb/s transmission system application.
  • Keywords
    integrated optics; lithium compounds; optical communication equipment; optical modulation; 100 degC; 2.8 V; 40 Gbit/s; LiNbO3; X-cut LiNbO3 wafer; low-drive-voltage modulator; optical modulators; traveling-wave electrodes; two-step back-slot structure; Electrodes; Frequency; High speed optical techniques; Insertion loss; Optical buffering; Optical losses; Optical modulation; Optical refraction; Optical variables control; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2001. ECOC '01. 27th European Conference on
  • Print_ISBN
    0-7803-6705-7
  • Type

    conf

  • DOI
    10.1109/ECOC.2001.989653
  • Filename
    989653