DocumentCode :
378449
Title :
Low-drive-voltage 40 Gb/s modulator on X-cut LiNbO3 wafer
Author :
Kondo, Jungo ; Kondo, Atsuo ; Aoki, Kenji ; Takatsuji, Saori ; Mitomi, Osamu ; Imaeda, Minoru ; Kozuka, Yoshinari ; Minakata, Makoto
Author_Institution :
NGK INSULATORS, LTD., Aichi, Japan
Volume :
3
fYear :
2001
fDate :
2001
Firstpage :
334
Abstract :
A 40 Gb/s X-cut LiNbO3 modulator based on a two-step back-slot structure provides low drive voltage of 2.8 V. No DC drift phenomena are observed during more than 100 hours of operation at 100 degree C. These performances indicate high potential for 40 Gb/s transmission system application.
Keywords :
integrated optics; lithium compounds; optical communication equipment; optical modulation; 100 degC; 2.8 V; 40 Gbit/s; LiNbO3; X-cut LiNbO3 wafer; low-drive-voltage modulator; optical modulators; traveling-wave electrodes; two-step back-slot structure; Electrodes; Frequency; High speed optical techniques; Insertion loss; Optical buffering; Optical losses; Optical modulation; Optical refraction; Optical variables control; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
Type :
conf
DOI :
10.1109/ECOC.2001.989653
Filename :
989653
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=378449
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