Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots

Author

R. Leon;S. Marcinkecius;J. Siegert;B. Cechavicius;B. Magness;W. Taylor;C. Lobo

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

49

Issue

6

fYear

2002

Firstpage

2844

Lastpage

2851

Abstract

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3D) quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4/spl times/10/sup 8/ to 3/spl times/10/sup 10/ cm/sup -1/), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses is also observed in InGaAs/GaAs [100] QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

Keywords

"Protons","Luminescence","III-V semiconductor materials","Quantum dots","Indium gallium arsenide","Gallium arsenide","Photoluminescence","Potential well","Density measurement","Indium compounds"

Journal_Title

IEEE Transactions on Nuclear Science

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.806018

Filename

1134230