DocumentCode :
3784640
Title :
Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
Author :
I. Mandic
Author_Institution :
Jozef Stefan Inst., Ljubljana, Slovenia
Volume :
49
Issue :
6
fYear :
2002
Firstpage :
2888
Lastpage :
2894
Abstract :
The ABCD3TA readout chip for silicon strip detectors of the ATLAS SemiConductor Tracker (SCT) is described. It is the final design of the single chip implementation of the binary readout architecture. The chip is manufactured in the DMILL radiation-hardened BiCMOS process. Summary of results of irradiations of ABCD3TA chips with up to 100 kGy and 2/spl times/10/sup 14/ n/cm/sup 2/ (1-MeV neutron NIEL equivalent) done with various sources is given in this paper. Measurements of single event effects with high-energy proton and pion beams are also reported. The tests proved that the chips are sufficiently radiation hard for application in the ATLAS SCT.
Keywords :
"Radiation effects","Silicon","Strips","Detectors","Manufacturing processes","Semiconductor device manufacture","BiCMOS integrated circuits","Neutrons","Semiconductor device measurement","Protons"
Journal_Title :
IEEE Transactions on Nuclear Science
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.805412
Filename :
1134236
Link To Document :
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