• DocumentCode
    3784640
  • Title

    Radiation effects in the readout chip for the ATLAS Semiconductor Tracker

  • Author

    I. Mandic

  • Author_Institution
    Jozef Stefan Inst., Ljubljana, Slovenia
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • Firstpage
    2888
  • Lastpage
    2894
  • Abstract
    The ABCD3TA readout chip for silicon strip detectors of the ATLAS SemiConductor Tracker (SCT) is described. It is the final design of the single chip implementation of the binary readout architecture. The chip is manufactured in the DMILL radiation-hardened BiCMOS process. Summary of results of irradiations of ABCD3TA chips with up to 100 kGy and 2/spl times/10/sup 14/ n/cm/sup 2/ (1-MeV neutron NIEL equivalent) done with various sources is given in this paper. Measurements of single event effects with high-energy proton and pion beams are also reported. The tests proved that the chips are sufficiently radiation hard for application in the ATLAS SCT.
  • Keywords
    "Radiation effects","Silicon","Strips","Detectors","Manufacturing processes","Semiconductor device manufacture","BiCMOS integrated circuits","Neutrons","Semiconductor device measurement","Protons"
  • Journal_Title
    IEEE Transactions on Nuclear Science
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.805412
  • Filename
    1134236