DocumentCode
3784640
Title
Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
Author
I. Mandic
Author_Institution
Jozef Stefan Inst., Ljubljana, Slovenia
Volume
49
Issue
6
fYear
2002
Firstpage
2888
Lastpage
2894
Abstract
The ABCD3TA readout chip for silicon strip detectors of the ATLAS SemiConductor Tracker (SCT) is described. It is the final design of the single chip implementation of the binary readout architecture. The chip is manufactured in the DMILL radiation-hardened BiCMOS process. Summary of results of irradiations of ABCD3TA chips with up to 100 kGy and 2/spl times/10/sup 14/ n/cm/sup 2/ (1-MeV neutron NIEL equivalent) done with various sources is given in this paper. Measurements of single event effects with high-energy proton and pion beams are also reported. The tests proved that the chips are sufficiently radiation hard for application in the ATLAS SCT.
Keywords
"Radiation effects","Silicon","Strips","Detectors","Manufacturing processes","Semiconductor device manufacture","BiCMOS integrated circuits","Neutrons","Semiconductor device measurement","Protons"
Journal_Title
IEEE Transactions on Nuclear Science
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805412
Filename
1134236
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