• DocumentCode
    378482
  • Title

    A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

  • Author

    Lim, H.S. ; Lam, Y.L. ; Chan, Y.C. ; Ooi, B.S. ; Aimez, V. ; Beauvais, J. ; Beerens, J.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • Volume
    3
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    412
  • Abstract
    10-channel monolithic multiple-wavelength laser diodes were demonstrated using a one-step gray mask and reactive ion etching technique to create a graded-thickness SiO2 implant mask, followed by low energy P++ implantation for bandgap tuning.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; ion implantation; semiconductor laser arrays; silicon compounds; sputter etching; III-V semiconductor wafer; InGaAs-InGaAsP; SiO2; bandgap tuning; gallium arsenide; graded-thickness implant mask; indium; monolithic multiple-wavelength laser diodes; one-step gray mask; phosphorus; photonic integrated circuits; reactive ion etching technique; silicon dioxide; Diode lasers; Epitaxial growth; Etching; Implants; Indium gallium arsenide; Laser tuning; Lithography; Optical arrays; Photonic band gap; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2001. ECOC '01. 27th European Conference on
  • Print_ISBN
    0-7803-6705-7
  • Type

    conf

  • DOI
    10.1109/ECOC.2001.989691
  • Filename
    989691
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=378482