Title :
A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays
Author :
Lim, H.S. ; Lam, Y.L. ; Chan, Y.C. ; Ooi, B.S. ; Aimez, V. ; Beauvais, J. ; Beerens, J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
10-channel monolithic multiple-wavelength laser diodes were demonstrated using a one-step gray mask and reactive ion etching technique to create a graded-thickness SiO2 implant mask, followed by low energy P++ implantation for bandgap tuning.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; ion implantation; semiconductor laser arrays; silicon compounds; sputter etching; III-V semiconductor wafer; InGaAs-InGaAsP; SiO2; bandgap tuning; gallium arsenide; graded-thickness implant mask; indium; monolithic multiple-wavelength laser diodes; one-step gray mask; phosphorus; photonic integrated circuits; reactive ion etching technique; silicon dioxide; Diode lasers; Epitaxial growth; Etching; Implants; Indium gallium arsenide; Laser tuning; Lithography; Optical arrays; Photonic band gap; Resists;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.989691
