DocumentCode :
378545
Title :
Power MOSFETs having Schottky barrier drain contact
Author :
Sakurai, Kenya ; Nishimura, Takeyoshi ; Obinata, Sigeyuki ; Momota, Seiji ; Nakajima, Tsunehiro ; Tagami, Saburo ; Furuhata, Shooichi ; Inakoshi, Yuji
Author_Institution :
Fuji Electric Co.,Ltd.
fYear :
1990
fDate :
1990
Firstpage :
126
Lastpage :
130
Keywords :
Artificial intelligence; Conductivity; Contact resistance; Erbium; Insulated gate bipolar transistors; MOSFETs; Power supplies; Production facilities; Schottky barriers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991072
Filename :
991072
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=378545
