DocumentCode :
378563
Title :
Modeling and characterization of GaAs/Ga1-xAlxAs MQW acousto-electro-optic modulators
Author :
Gazalet, J. ; Sainte-Rose, F. ; Lefebvre, J.E. ; Gryba, T.
Author_Institution :
Departement OAE, Univ. de Valenciennes, Le Mont Houy, France
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
27
Abstract :
We present a new acousto-optoelectronic multi-quantum-well modulator structure for optical telecommunication. Inserting the multi-quantum-well GaAs/AlxGa1-xAs between two AlAs/GaAlAs Bragg mirrors constituting a Fabry-Perot cavity increases the structure performances. Experimental and theoretical results are in good agreement
Keywords :
Bragg gratings; Fabry-Perot interferometers; III-V semiconductors; acoustoelectric devices; aluminium compounds; electro-optical modulation; gallium arsenide; quantum well devices; semiconductor quantum wells; AlAs/GaAlAs Bragg mirrors; Fabry-Perot cavity; GaAs-Ga1-xAlxAs; GaAs/Ga1-xAlxAs MQW acousto-electro-optic modulators; Acoustic waves; Gallium arsenide; Mirrors; Optical modulation; Optical reflection; Optical refraction; Optical surface waves; Quantum well devices; Surface acoustic wave devices; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
Type :
conf
DOI :
10.1109/ULTSYM.2001.991571
Filename :
991571
Link To Document :
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