Title :
Integration of RF filters on GaAs substrate
Author :
Gryba, T. ; Haddou, A. ; Sadaune, V. ; Zhang, V. ; Lefebvre, J.E. ; Doghech, E. ; Cattan, E. ; Remiens, D.
Author_Institution :
Departement OAE, Univ. de Valenciennes, France
Abstract :
Up to now, RF front-end and interstage surface acoustic wave (SAW) filters for mobile communication are mainly fabricated on LiNbO3 and LiTaO3 substrates. A monolithic integration of these filters on semiconductor substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. Direct realization of SAW filters on non piezoelectric or weakly piezoelectric substrates is impossible. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we present an analysis and realization of a ladder SAW filter built up on a two-layered structure made up of a ZnO film on a GaAs substrate in the 900 MHz frequency range
Keywords :
II-VI semiconductors; UHF filters; cellular radio; ladder filters; piezoelectric semiconductors; piezoelectric thin films; surface acoustic wave filters; zinc compounds; 900 MHz; GaAs; RF filters; ZnO-GaAs; cellular phones; interstage surface acoustic wave; ladder filter; mobile communication; outer dimensions; piezoelectric film; semiconductor substrate; two-layered structure; Acoustic waves; Cellular phones; Gallium arsenide; Mobile communication; Monolithic integrated circuits; Piezoelectric films; Radio frequency; SAW filters; Substrates; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991578
