DocumentCode :
378585
Title :
High temperature stable high electromechanical coupling substrates and application for surface acoustic wave devices
Author :
Yamanouchi, Kazuhiko ; ISHII, Toru
Author_Institution :
Tohoku Inst. of Technol., Sendai, Japan
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
189
Abstract :
In this paper, in order to improve the TCF the propagation characteristics of SiO2/Rotated Y-cut, X-propagating LiNbO 3 leaky SAW substrates with a large electromechanical coupling coefficient (k2) and zero temperature coefficient of frequency (TCF) are theoretically investigated. The results showed a large k2 of leaky SAW over 0.2 (zero k2 of Rayleigh mode), zero TCF and zero propagation attenuation in the case of short boundary at thin film thickness of H/λ≑0.15-0.25(H: SiO2 film thickness, λ:SAW wavelength) were obtained. The experimental results agreed to the theoretical ones
Keywords :
lithium compounds; piezoelectric materials; silicon compounds; substrates; surface acoustic wave devices; LiNbO3 substrate; Rayleigh mode; SiO2 thin film; SiO2-LiNbO3; electromechanical coupling coefficient; leaky SAW mode; propagation attenuation; surface acoustic wave device; temperature coefficient of frequency; temperature stability; Acoustic propagation; Acoustic waves; Attenuation; Frequency; Laplace equations; Substrates; Surface acoustic wave devices; Surface acoustic waves; Surface waves; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
Type :
conf
DOI :
10.1109/ULTSYM.2001.991606
Filename :
991606
Link To Document :
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